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25AA640/25LC640
3.6
Write Status Register Instruction
TABLE 3-2:
ARRAY PROTECTION
( WRSR )
The Write Status Register instruction ( WRSR ) allows the
user to select one of four levels of protection for the
array by writing to the appropriate bits in the STATUS
register. The array is divided up into four segments.
The user has the ability to write-protect none, one, two,
or all four of the segments of the array. The partitioning
is controlled as shown in Table 3-2.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
BP1
0
0
1
1
BP0
0
1
0
1
Array Addresses
Write-Protected
none
upper 1/4
(1800h-1FFFh)
upper 1/2
(1000h-1FFFh)
all
(0000h-1FFFh)
Write-Protect (WP) pin and the Write-Protect Enable
(WPEN) bit in the STATUS register control the pro-
grammable hardware write-protect feature. Hardware
write protection is enabled when the WP pin is low and
the WPEN bit is high. Hardware write protection is dis-
abled when either the WP pin is high or the WPEN bit
is low. When the chip is hardware write-protected, only
writes to nonvolatile bits in the STATUS register are dis-
abled. See Table 3-3 for a matrix of functionality on the
WPEN bit.
See Figure 3-7 for WRSR timing sequence.
FIGURE 3-7:
CS
WRITE STATUS REGISTER TIMING SEQUENCE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS Register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Impedance
SO
? 2008 Microchip Technology Inc.
DS21223H-page 11
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相关PDF资料
25LC640A-E/P IC EEPROM 64KBIT 10MHZ 8DIP
281708-4 PLUG HE14 IDC 90 4 P TUBE
281709-4 PLUG HE13 IDC 90 4 P AWG 24
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281789-8 PLUG HE14 IDC 180 2X8 P AWG26-24
相关代理商/技术参数
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25LC640E/SN 制造商:Microchip Technology Inc 功能描述:
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25LC640-E/SNG 功能描述:电可擦除可编程只读存储器 8kx8 - 2.5V Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
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